infrared led chip high speed / n side-up gaalas/gaalas 1. material substrate gaalas (p type) removed epitaxial layer gaalas (n/p type) 2. electrode n(cathode) side gold alloy p(anode) side gold alloy 3. electro-optical parameter symbol min typ max unit condition characteristics v f(1) 1.1 v if=10ua v f(2) 1.8 2 v if=100ma reverse voltag e v r 4 v ir=10ua power p o 10.25 mw if=100ma p 880 nm if=20ma ? 80 nm if=20ma rise time tr 700 ns fall time tf 400 ns note : power is measured by sorter e/t system with bare chip. 4. mechanical dat a (a) emission area --------------------- 10.0mil x 10.0mil (b) bottom area --------------------- 11.0mil x 11.0mil (c) bonding pad --------------------- 110um (d) chip thickness --------------------- 10mil (e) junction height --------------------- 9.0mil epi epi n p n side electrode p side electrode eoyang factory,513-5 eoyang-dong, iksan, 570-210, korea tel. +82 63 839 1111 fax. +82 63 835 8259 www.auk.co.kr OPA8828 f orward voltag e wavelength auk corp. (c) (a) (b) (e) (d)
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